www.irf.com 1 08/09/10 IRF7380QPBF hexfet power mosfet notes through are on page 8 so-8 d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 advanced process technology ultra low on-resistance n channel mosfet surface mount available in tape & reel 150c operating temperature lead-free description additional features of these hexfet power mosfet's are a 150c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. the efficient so-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. this surface mount so-8 can dramatically reduce board space and is also available in tape & reel. v dss r ds(on) max i d 80v 73m @v gs = 10v 2.2a absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c maximum power dissipation w linear derating factor w/c dv/dt peak diode recovery dv/dt v/ns t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 42 c/w r ja junction-to-ambient (pcb mount) * ??? 50 max. 3.6 2.9 29 80 20 2.3 2.0 -55 to + 150 0.02
IRF7380QPBF 2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 80 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.09 ??? v/c r ds(on) static drain-to-source on-resistance ??? 61 73 m ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 dynamic @ t j = 25c (unless otherwise specified) parameter min. typ. max. units gfs forward transconductance 4.3 ??? ??? s q g total gate charge ??? 15 23 q gs gate-to-source charge ??? 2.9 ??? nc q gd gate-to-drain ("miller") charge ??? 4.5 ??? t d(on) turn-on delay time ??? 9.0 ??? t r rise time ??? 10 ??? t d(off) turn-off delay time ??? 41 ??? ns t f fall time ??? 17 ??? c iss input capacitance ??? 660 ??? c oss output capacitance ??? 110 ??? c rss reverse transfer capacitance ??? 15 ??? pf c oss output capacitance ??? 710 ??? c oss output capacitance ??? 72 ??? c oss eff. effective output capacitance ??? 140 ??? avalanche characteristics parameter units e as sin g le pulse avalanche ener gy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 3.6 a (body diode) i sm pulsed source current ??? ??? 29 a ( bod y diode ) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 50 ??? ns q rr reverse recovery charge ??? 110 ??? nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) typ. ??? ??? conditions v ds = 25v, i d = 2.2a i d = 2.2a v ds = 40v conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz 75 2.2 mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = 2.2a, v gs = 0v t j = 25c, i f = 2.2a, v dd = 40v di/dt = 100a/s conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 2.2a v ds = v gs , i d = 250a v ds = 80v, v gs = 0v v ds = 64v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v max. v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 64v, ? = 1.0mhz v gs = 0v, v ds = 0v to 64v v gs = 10v v dd = 40v i d = 2.2a r g = 24 ?
IRF7380QPBF www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 v = i = gs d 10v 3.6a 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 0 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 15v 20s pulse width 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.7v 20s pulse width tj = 150c vgs top 15v 10v 7.0v 5.0v 4.5v 4.3v 4.0v bottom 3.7v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.7v 20s pulse width tj = 25c vgs top 15v 10v 7.0v 5.0v 4.5v 4.3v 4.0v bottom 3.7v t j , junction temperature (c) rds(on), drain-to-source on resistance (normalized)
IRF7380QPBF 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 v = 0 v gs t = 150 c j t = 25 c j 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 2 4 6 8 10 12 14 16 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 64v v ds = 40v v ds = 16v i d = 2.1a v sd , source-to-drain voltage (v) i sd , reverse drain current (a)
IRF7380QPBF www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 9. maximum drain current vs. ambient temperature 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 i , drain current (a) d t a , ambient temperature (c) 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
IRF7380QPBF 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 40 80 120 160 200 i d top bottom 1.0a 1.8a 2.2a 0 5 10 15 20 25 30 i d , drain current (a) 50 55 60 65 70 75 80 85 90 95 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = 10v 3.0 5.0 7.0 9.0 11.0 13.0 15.0 v gs, gate -to -source voltage (v) 0 100 200 300 400 500 600 700 800 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 3.6a starting t j , junction temperature (c) e as , single pulse avalanche energy (mj)
IRF7380QPBF www.irf.com 7 so-8 package outline (mosfet & fetky) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b asic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 b as ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 8x 1.78 [ .070 ] 4. out li ne conf orms t o je de c ou t l ine ms -012aa. not es : 1. dime ns ioning & t olerancing pe r as me y14.5m-1994. 2. cont rol l ing dime ns ion: mill ime t er 3. dime ns ions are s hown in mil l imet e rs [inche s ]. 5 dime ns ion doe s not incl ude mol d prot rus ions . 6 dime ns ion doe s not incl ude mol d prot rus ions . mold prot rus ions not t o exceed 0.25 [.010]. 7 dime ns ion is t he l e ngt h of l ead f or s ol dering t o a subst rat e. mold prot rus ions not t o exceed 0.15 [.006]. dimensions are shown in milimeters (inches) so-8 part marking information p = disgnates lead - free example: this is an irf7101 (mos fet ) f 7101 xxxx international logo rect ifier part number lot code product (optional) dat e code (yww) y = last digit of the year ww = we e k a = assembly site code notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/
IRF7380QPBF 8 www.irf.com repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 31mh r g = 25 ? , i as = 2.2a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss. i sd 2.2a, di/dt 220a/s, v dd v (br)dss ,t j 150c. 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/2010 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site.
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